Explosive growth of demand for epitaxial production of SiC and GaN wafers, many new MOCVD reactors are being installed
Explosive growth of demand for epitaxial production of SiC and GaN wafers, many new MOCVD reactors are being installed
Setting up and maintaining MOCVD production recipes requires frequent SIMS tests for doping levels and contaminants.
MIALabs specializes in these types of analysis with dedicated tools calibrated and capable of lowest detection limits required for typical contamination such as H, C, N and O.
Ion Implantation and Junction Depth
Ion Implantation and Junction Depth
Ion implantation is at the core of semiconductor manufacturing process. SIMS allows for accurate and precise measurement including dose, energy whether annealed or not.
ALD and PEALD platforms development
ALD and PEALD platforms development
Competition in key semiconductor technologies for platforms like ALD, epitaxy, PEALD, PECVD, and vertical furnaces is heating up with many small start ups developing technologies that outperform well known industry leaders like AMAT and ASM.
Our expert SIMS recipes are expertly customized to deliver quick and accurate feedback to help customer outcompete and take market leadership position.
III-V Epitaxial Development
III-V Epitaxial Development
Wide bandgap compound semiconductors are gaining on silicon! From simple things such as a computer mouse and laser printer, to advanced applications such as LIDAR (laser imaging, detection, and ranging) and autonomous driving world increasingly depends on them.
Structure and composition as well as layer uniformity are key parameters monitored during epitaxial growth. They are critical for performance and reliability of the devices. While modern epitaxial reactor have in-situ monitoring systems still defects and non-uniformities can occur during growth which can escape detection and seriously affect performance of finished devices. Catching epitaxial issues early and most importantly correcting them requires deep understanding of their root causes.
MIA Labs has years of experience supporting epitaxial growth in manufacturing environments. We can help!
Utilizing SIMS (Secondary Ion Mass Spectrometry) Services
SIMS can directly measure every element in the Periodic Table. Unlike many other tools that monitor indirect feedback such as resistivity or reflections. It has unprecedented sensitivity to all common contaminants that can help detemine the source and quickly get the reactor back on track.
It’s data is representative of a larger area unlike transmission microscopy that may miss importance defect due to ultra small field of view or not be able to identify element due to poor sensitivity.
Most Popular SIMS Analyses
Typical elements include H, B, C, O, N, F, Al, Si, P and any other that could be at any concentration from 100% down to ppm and below.
These elements are depth profiled with utmost resolution to provide detailed depth distribution in the films and interfaces.
Even very small amounts
Interfacial contamination is very common and critical to device performance and reliability. SIMS depth profiling is the right tool to check for any contamination and accurately measure any element from hydrogen to uranium.
SIMS: A Key Technology for Semiconductor Development
SIMS: A Key Technology for Semiconductor Development
Interfacial contamination is very common and critical to device performance and reliability. SIMS depth profiling is the right tool to check for any contamination and accurately measure any element from hydrogen to uranium.
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